Cortex-M3 (NXP LPC1788)之SDRAM操作

網(wǎng)上看到了一些關(guān)于1788 SDRAM的調(diào)試代碼，基本上都一樣，本人在調(diào)試1788 SDRAM過程中，遇到了一些大麻煩，本人使用的的SDRAM芯片為MT48LC16M162. 本人遇到的問題如下：

1：1788芯片硬件仿真初期，調(diào)試SDRAM寄存器配置錯誤，導(dǎo)致1788芯片無法進(jìn)入仿真狀態(tài)，只能用Flash Magic才能擦除。

2：1788芯片的SDRAM有一個很重要的寄存器，官方驅(qū)動為 LPC_SC->EMCDLYCTL 寄存器的設(shè)置，就算你和官方所使用芯片一樣，只要電路板有差異，這個寄存器的設(shè)置將有可能導(dǎo)致SDRAM在使用過程中出現(xiàn)錯誤。

3：還有對于時序的設(shè)置，這一步相對來說就比較簡單了。

下面例舉出我的示例代碼：

說明:

1：至于端口配置本人參考官方NXP網(wǎng)站，如果你的端口有充足情況下面，本人建議你不要修改。

2：本人的CPU主頻為108M,不是120M，因為我的電路板的原因，在120M的時候，偶爾會有無法啟動SDRAM的情況，所以為了安全本人使用了108M的主頻。

1 #define SDRAM_REFRESH 7513

2 #define SDRAM_TRP 24

3 #define SDRAM_TRAS 40

4 #define SDRAM_TAPR 2

5 #define SDRAM_TDAL 2

6 #define SDRAM_TWR 18

7 #define SDRAM_TRC 70

8 #define SDRAM_TRFC 70

9 #define SDRAM_TXSR 78

10 #define SDRAM_TRRD 18

11 #define SDRAM_TMRD 2

12

13

14

15 void EMC_Init(void)

16 {

17 uint8_t i;

18

19

20 CLKPWR_ConfigPPWR(CLKPWR_PCONP_PCEMC, ENABLE);

21 LPC_SC->EMCDLYCTL = (0x10 << 8) | (0 << 16) | (0 << 24) | 4;

22

23 LPC_EMC->Control = 0x00000001;

24 LPC_EMC->Config = 0x00000000;

25

26

27 PINSEL_ConfigPin(2,14,1);

28 PINSEL_ConfigPin(2,15,1);

29 PINSEL_ConfigPin(2,16,1);

30 PINSEL_ConfigPin(2,17,1);

31 PINSEL_ConfigPin(2,18,1);

32 PINSEL_ConfigPin(2,19,1);

33 PINSEL_ConfigPin(2,20,1);

34 PINSEL_ConfigPin(2,21,1);

35 PINSEL_ConfigPin(2,22,1);

36 PINSEL_ConfigPin(2,23,1);

37 PINSEL_ConfigPin(2,24,1);

38 PINSEL_ConfigPin(2,25,1);

39 PINSEL_ConfigPin(2,26,1);

40 PINSEL_ConfigPin(2,27,1);

41 PINSEL_ConfigPin(2,28,1);

42 PINSEL_ConfigPin(2,29,1);

43 PINSEL_ConfigPin(2,30,1);

44 PINSEL_ConfigPin(2,31,1);

45

46 for(i = 0; i < 32; i++)

47 {

48 PINSEL_ConfigPin(3,i,1);

49 PINSEL_ConfigPin(4,i,1);

50 }

51

52 }

53

54

55

56 int Sdram_Debug(void)

57 {

58 INT32U i=0,j,k;

59 volatile INT32U *pmp;

60

61

62 pmp = (volatile INT32U *)BASE_SDRAMADDR;

63 j = SDRAM_SIZE/sizeof(*pmp);

64 for(i=0;i

65 pmp[i] = i;

66

67 for (k =0; k < 1; k++)

68 {

69 for(i=0;i

70 {

71 if(pmp[i] != i)

72 {

73 while(1);

74 return FALSE;

75 }

76 }

77 }

78 return TRUE;

79 }

80

81

82

83 #define P2C(Period) (((Period

84

85 void SDRAMInit(void)

86 {

87 uint32_t i;

88 int dwtemp;

89 uint32_t uClk;

90 float SDRAM_PERIOD;

91 LPC_EMC->DynamicConfig0 = 0x00000680;

92

93 uClk = CLKPWR_GetCLK(CLKPWR_CLKTYPE_EMC);

94 uClk /= 1000000UL;

95 SDRAM_PERIOD = (float)1000/uClk;

96

97 LPC_EMC->DynamicRP = P2C(SDRAM_TRP);

98 LPC_EMC->DynamicRAS = P2C(SDRAM_TRAS);

99 LPC_EMC->DynamicSREX = P2C(SDRAM_TXSR);

100 LPC_EMC->DynamicAPR = SDRAM_TAPR;

101 LPC_EMC->DynamicDAL = SDRAM_TDAL+P2C(SDRAM_TRP);

102 LPC_EMC->DynamicWR = P2C(SDRAM_TWR);

103 LPC_EMC->DynamicRC = P2C(SDRAM_TRC);

104 LPC_EMC->DynamicRFC = P2C(SDRAM_TRFC);

105 LPC_EMC->DynamicXSR = P2C(SDRAM_TXSR);

106 LPC_EMC->DynamicRRD = P2C(SDRAM_TRRD);

107 LPC_EMC->DynamicMRD = SDRAM_TMRD;

108

109 LPC_EMC->DynamicConfig0 = 0x00000680;

110 LPC_EMC->DynamicRasCas0 = 0x00000303;

111 LPC_EMC->DynamicReadConfig = 0x00000001;

112

113 TIM_Waitms(100);

114 LPC_EMC->DynamicControl = 0x00000183; /* Issue NOP command */

115

116 TIM_Waitms(200);

117 LPC_EMC->DynamicControl = 0x00000103;

118 LPC_EMC->DynamicRefresh = 0x00000002;

119

120 for(i = 0; i < 0x100; i++);

121

122 LPC_EMC->DynamicRefresh = P2C(SDRAM_REFRESH)>>4;

123

124 LPC_EMC->DynamicControl = 0x00000083; /* Issue MODE command */

125

126 dwtemp = *((volatile int *)(SDRAM_BASE_ADDR | (0x33<<12)));

127

128 LPC_EMC->DynamicControl = 0x00000000;

129

130 LPC_EMC->DynamicConfig0 = 0x00080680;

131 for(i = 0; i < 20000; i++);

132 Sdram_Debug();

133 }

上面的LPC_SC->EMCDLYCTL 是我自己調(diào)試出來的準(zhǔn)確的值，所以固定了。當(dāng)然Segger公司有一個更好的辦法計算LPC_SC->EMCDLYCTL，以下為參考Segger公司的函數(shù)。

1 static int _TestSDRAM(void) {

2 volatile uint32_t * pWriteLong;

3 volatile uint16_t * pWriteShort;

4 uint32_t Data;

5 uint32_t i;

6 uint32_t j;

7

8 pWriteLong = (uint32_t*)SDRAM_BASE_ADDR;

9 pWriteShort = (uint16_t*)SDRAM_BASE_ADDR;

10 //

11 // Fill 16 bit wise

12 //

13 for (i = 0; i < (SDRAM_SIZE / 0x40000); i++) {

14 for (j = 0; j < 0x100; j++) {

15 *pWriteShort++ = (i + j);

16 *pWriteShort++ = (i + j) + 1;

17 }

18 }

19 //

20 // Verifying

21 //

22 pWriteLong = (uint32_t*)SDRAM_BASE_ADDR;

23 for (i = 0; i < (SDRAM_SIZE / 0x40000); i++) {

24 for (j = 0; j < 0x100; j++) {

25 Data = *pWriteLong++;

26 if (Data != (((((i + j) + 1) & 0xFFFF) << 16) | ((i + j) & 0xFFFF))) {

27 return 1; // Error

28 }

29 }

30 }

31 return 0; // O.K.

32 }

33

34 static void _FindDelay(int DelayType) {

35 uint32_t Delay;

36 uint32_t Min;

37 uint32_t Max;

38 uint32_t v;

39 Delay = 0x00;

40 Min = 0xFF;

41 Max = 0xFF;

42 //

43 // Test for DLY min./max. values

44 //

45 while (Delay < 32) {

46 //

47 // Setup new DLY value to test

48 //

49 if (DelayType == 0) {

50 v = LPC_SC->EMCDLYCTL & ~0x001Ful;

51 LPC_SC->EMCDLYCTL = v | Delay;

52 } else {

53 v = LPC_SC->EMCDLYCTL & ~0x1F00ul;

54 LPC_SC->EMCDLYCTL = v | (Delay << 8);

55 }

56 //

57 // Test configured DLY value and find out min./max. values that will work

58 //

59 if (_TestSDRAM() == 0) {

60 //

61 // Test passed, remember min. DLY value if not done yet

62 //

63 if (Min == 0xFF) {

64 Min = Delay;

65 }

66 } else {

67 //

68 // Test failed, if a min. value has been found before, remember the current value for max.

69 //

70 if (Min != 0xFF) {

71 Max = Delay;

72 }

73 }

74 Delay++;

75 }

76 //

77 // Calc DLY value

78 //

7