三星攜手GLOBALFOUNDRIES開發(fā)14nm工藝

根據(jù)為期多年的協(xié)議，GLOBALFOUNDRIES將授權(quán)三星的14納米FinFET器件, 和三星同步使用自己在美國和韓國的晶圓廠制造和生產(chǎn)14nm。這是在晶圓業(yè)第一個能從20納米真實面積縮放的14納米FinFET技術(shù)，而這術(shù)平臺已經(jīng)獲得了牽引作為高容量，低功耗的SoC設(shè)計中的首選。隨著GLOBALFOUNDRIES和三星攜手合作，無晶圓廠半導(dǎo)體客戶將享有更多的選擇和靈活性，因為供應(yīng)將來自多個世界源地。與此同時，無晶圓廠半導(dǎo)體客戶也能維持在流動性和IT基礎(chǔ)設(shè)施的領(lǐng)導(dǎo)地位。

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Samsung Electronics Co., Ltd. and GLOBALFOUNDRIES today announced a new strategic collaboration to deliver global capacity for 14 nanometer (nm) FinFET process technology. For the first time, the industry’s most advanced 14nm FinFET technology will be available at both Samsung and GLOBALFOUNDRIES, giving customers the assurance of supply that can only come from true design compatibility at multiple sources across the globe. The new collaboration will leverage the companies’ worldwide leading-edge semiconductor manufacturing capabilities, with volume production at Samsung’s fabs in Hwaseong, Korea and Austin, Texas, as well as GLOBALFOUNDRIES’ fab in Saratoga, New York.

Developed by Samsung and licensed to GLOBALFOUNDRIES, the 14nm FinFET process is based on a technology platform that has already gained traction as the leading choice for high-volume, power-efficient system-on-chip (SoC) designs. The platform taps the benefits of three-dimensional, fully depleted FinFET transistors to overcome the limitations of planar transistor technology, enabling up to 20 percent higher speed, 35 percent less power and 15 percent area scaling over industry 20nm planar technology.

The platform is the first FinFET technology in the foundry industry to provide true area scaling from 20nm. The technology features a smaller contacted gate pitch for higher logic packing density and smaller SRAM bitcells to meet the increasing demand for memory content in advanced SoCs, while still leveraging the proven interconnect scheme from 20nm to offer the benefits of FinFET technology with reduced risk and the fastest time-to-market.

Through this multi-year exclusive technology license, process design kits (PDKs) are available now, allowing customers to start designing with models, design rule manuals, and technology files that have been developed based on silicon results from 14nm FinFET test chips. Mass production for the 14nm FinFET technology will begin at the end of 2014.

“This unprecedented collaboration will result in a global capacity footprint for 14nm FinFET technology that provides AMD with enhanced capabilities to bring our innovative IP into silicon on leading-edge technologies,” said Lisa Su, senior vice president and general manager of Global Business Units at AMD. “The work that GLOBALFOUNDRIES and Samsung are doing together will help AMD deliver our next generation of groundbreaking products with new levels of processing and graphics capabilities to devices ranging from low-power mobile devices, to next-generation dense servers to high-performance embedded solutions.”

“This strategic collaboration extends the value proposition of a single GDSII multi-sourcing to the FinFET nodes. With this true multi-source platform, Samsung and GLOBALFOUNDRIES have made it easy for fabless semiconductor companies to access FinFET technology and increase first-time silicon success,” said Dr. Stephen Woo, president of System LSI business, device solutions, Samsung Electronics Division. “Through this collaboration, we are advancing the foundry business and support model to satisfy what customers have been asking for.”

“Today’s announcement is further proof of the importance of collaboration to enable continued innovation in semiconductor manufacturing,” said GLOBALFOUNDRIES CEO Sanjay Jha. “With this industry-first alignment of 14nm FinFET production capabilities, we can offer greater choice and flexibility to the world’s leading fabless semiconductor companies, while helping the fabless industry to maintain its leadership in the mobile device market.”

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